型号: 2N2222
厂商: Central Semiconductor Central Semiconductor
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt npn silicon
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2N2222的详细信息

Manufacturer: Central Semiconductor
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 30 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.6 V
Maximum DC Collector Current: 0.8 A
Gain Bandwidth Product fT: 250 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-18
Continuous Collector Current: 0.45 A
DC Collector/Base Gain hfe Min: 35
Maximum Power Dissipation: 0.4 W
Minimum Operating Temperature: - 65 C
Packaging: Bulk
Series: 2N2222
Factory Pack Quantity: 2000
2N2221  
2N2222  
www.centralsemi.com  
SILICON  
NPN TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N2221 and  
2N2222 are silicon NPN epitaxial planar transistors  
designed for small signal, general purpose switching  
applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
60  
30  
CBO  
CEO  
EBO  
V
V
5.0  
I
800  
mA  
mW  
W
C
P
500  
D
D
Power Dissipation (T =25°C)  
C
P
1.2  
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
350  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
146  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=50V  
-
10  
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=50V, T =150°C  
A
=3.0V  
-
-
10  
10  
-
μA  
nA  
V
BV  
BV  
BV  
I =10μA  
60  
30  
5.0  
-
CBO  
C
I =10mA  
-
V
CEO  
C
I =10μA  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
V
C
B
I =150mA, I =15mA  
0.6  
-
V
C
B
I =500mA, I =50mA  
V
C
B
f
V
=20V, I =20mA, f=100MHz  
250  
-
MHz  
pF  
pF  
T
CE  
CB  
EB  
C
C
V
V
=10V, I =0, f=100kHz  
8.0  
30  
ob  
ib  
E
C
=0.5V, I =0, f=100kHz  
-
C
R2 (24-July 2013)