Image 2N3904
型号: 2N3904
厂商: Central Semiconductor Central Semiconductor
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt npn gen pur SS
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2N3904的详细信息

Manufacturer: Central Semiconductor
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Brand: Central Semiconductor
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 40 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.3 V
Maximum DC Collector Current: 0.2 A
Gain Bandwidth Product fT: 300 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-92
Continuous Collector Current: 0.2 A
DC Collector/Base Gain hfe Min: 100
Maximum Power Dissipation: 625 mW
Minimum Operating Temperature: - 55 C
Packaging: Bulk
Series: 2N3904
Factory Pack Quantity: 2500
2N3903  
2N3904  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N3903 and  
2N3904 types are NPN silicon transistors designed for  
general purpose amplifier and switching applications.  
PNP complementary types are 2N3905 and 2N3906.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
60  
40  
6.0  
200  
625  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
mA  
mW  
°C  
I
C
P
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
Thermal Resistance  
Θ
200  
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C)  
2N3903  
2N3904  
A
SYMBOL  
TEST CONDITIONS  
=30V, V =3.0V  
MIN  
MAX  
50  
MIN  
-
MAX  
50  
UNITS  
nA  
I
V
-
CEV  
CE  
I =10μA  
EB  
BV  
BV  
BV  
60  
40  
6.0  
-
-
-
-
60  
40  
6.0  
-
-
-
-
V
V
V
V
V
V
V
CBO  
CEO  
EBO  
C
I =1.0mA  
C
I =10μA  
E
V
V
V
V
I =10mA, I =1.0mA  
0.2  
0.3  
0.85  
0.95  
-
0.2  
0.3  
0.85  
0.95  
-
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
C
B
B
B
B
I =50mA, I =5.0mA  
-
-
I =10mA, I =1.0mA  
0.65  
-
0.65  
-
C
I =50mA, I =5.0mA  
C
h
h
h
h
h
h
V
=1.0V, I =0.1mA  
20  
35  
50  
30  
15  
50  
250  
-
40  
70  
100  
60  
30  
100  
300  
-
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
EB  
CE  
C
V
V
V
V
V
V
V
V
V
=1.0V, I =1.0mA  
-
-
FE  
FE  
FE  
FE  
C
=1.0V, I =10mA  
150  
-
300  
-
C
=1.0V, I =50mA  
C
=1.0V, I =100mA  
-
-
C
=10V, I =1.0mA, f=1.0kHz  
200  
-
4.0  
8.0  
400  
-
4.0  
8.0  
fe  
C
f
=20V, I =10mA, f=100MHz  
MHz  
pF  
pF  
T
C
C
C
NF  
=5.0V, I =0, f=100kHz  
ob  
ib  
E
=0.5V, I =0, f=100kHz  
-
-
C
=5.0V, I =100μA, R =1.0kΩ  
C S  
f=10Hz to 15.7kHz  
=3.0V, V  
-
6.0  
-
5.0  
dB  
t
t
V
=0.5V, I =10mA  
BE(OFF) C  
on  
CC  
=1.0mA  
I
V
-
-
70  
225  
-
-
70  
250  
ns  
ns  
B1  
CC  
=3.0V, I =10mA, I =I =1.0mA  
B1 B2  
off  
C
R2 (12-October 2011)