Image 2N7000
型号: 2N7000
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet N-channel 60v 200ma
PDF: 预览
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >> 厂商下载2 >>

2N7000的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 200 mA
Rds On - Drain-Source Resistance: 1.2 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 400 mW
Mounting Style: Through Hole
Package / Case: TO-92-3
Packaging: Bulk
Brand: Fairchild Semiconductor
Channel Mode: Enhancement
Forward Transconductance - Min: 0.1 S
Minimum Operating Temperature: - 55 C
Series: 2N7000
Factory Pack Quantity: 2000
Part # Aliases: 2N7000_NL
Unit Weight: 201 mg
November  
1995  
  2N7000 / 2N7002 / NDS 7002A  
N-Channel  
Enhancement Mode Fi eld Ef f ect Tr ansi st or  
GeneralDescri pt i on  
Feat ures  
Hi gh densi t y cel l defsiogrlnow R  
N- C hannel enhancement mode f i el d ef f ect t r ansi st or s  
.
These  
ar e pr oduced usi ng Fai r chi l d's pr opr i et ar y, hi gh cel l densi t y,  
DS( ON)  
Vol t age cont r ol l ed smal l si gnal swi t ch.  
Rugged and r el i abl e.  
DMOS t echnol ogy.  
These pr oduct s have been desi gned t o  
mi ni mi ze on- st at e r esi st ance whi l e pr ovi de r ugged, r el i abl e,  
and f ast swi t chi ng per f orTmhaeny cec. an be used i n most  
appl i cat i ons r equi r i ng up t o 400mA DC and can del i ver  
Hi gh sat ur at i on cur r ent capabi l i t y.  
pul sed cur r ent s up t o 2A.  
These pr oduct s ar e par t i cul ar l y  
sui t ed f or l ow vol t age, l ow cur r ent appl i cat i ons such as smal l  
ser vo mot or cont r ol , power MOSFET gat e dr i ver s, and ot her  
swi t chi ng appl i cat i ons.  
___________________________________________________________________________________________  
D
G
D
G
S
TO- 92  
2N7000  
S
( TO-236AB)  
2N7002/ NDS 7002A  
Absolut e Maxi mum R at i ngs    T A = 25°C unl ess ot her wi se not ed  
2N7000  
2N7002  
NDS 7002A  
S ymbol  
Par amet er  
Uni t s  
VDSS  
Dr ai n- Sour ce Vol t age  
6 0  
6 0  
V
V
VDGR  
Dr ai n- Gat e Vol t age GS( R< 1 WM)  
VGSS  
Gat e- Sour ce Vol t age - Cont i nuous  
V
±20  
-
Non Repet i t i ve ( t p  
<
50µs)  
±40  
ID  
Maxi mum Dr ai n Cur r ent  
-
Cont i nuous  
Pul sed  
200  
115  
8 00  
200  
28 0  
mA  
-
500  
1500  
3 00  
PD  
Maxi mum Power Di ssi pat i on  
Der at ed above 25 o C  
400  
3 . 2  
mW  
1. 6  
2. 4  
mW/ °C  
T J, T  
Oper at i ng and St or age Temper at ur e Range  
- 55 t o 150  
- 6 5 t o 150 °C  
°C  
STG  
T L  
Maxi mum Lead Temper at ur e f or Sol der i ng  
3 00  
6 25  
Pur poses, 1/ 16 " f r om Case f or 10 Seconds  
THER MALCHAR ACTER I S TI CS  
Ther mal Resi st ance, J unct i on- t o- Ambi ent  
3 12. 5  
417  
°C/ W  
R
J A  
q
© 1997 Fairchild Semiconductor Corporation  
2N7000. SAM Rev. A1