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| 型号： | A2T18S162W31S |
| 厂商： |
 NXP Semiconductors |
| 分类： | 半导体 ， RF 晶体管 (BJT) |
| 描述： | these 32 W RF power ldmos transistors are designed for cellular basestation applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 mhz. |
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A2T18S162W31S的详细信息
| Detail： | These 32 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. |
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