Image BAV70
型号: BAV70
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: diodes - general purpose, power, switching 70v 200ma
PDF: 预览
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >> 厂商下载2 >>

BAV70的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: Diodes - General Purpose, Power, Switching
RoHS: Yes
Peak Reverse Voltage: 70 V
Forward Continuous Current: 0.2 A
Max Surge Current: 2 A
Configuration: Dual Common Cathode
Recovery Time: 6 ns
Forward Voltage Drop: 1.25 V at 0.15 A
Maximum Reverse Leakage Current: 5 uA
Mounting Style: SMD/SMT
Package / Case: SOT-23
Packaging: Reel
Brand: Fairchild Semiconductor
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Series: BAV70
Factory Pack Quantity: 3000
Part # Aliases: BAV70_NL
Unit Weight: 25 mg
BAV70 / 74  
Connection Diagram  
3
3
3
A4  
2
1
2
MARKING  
BAV70 A4 BAV74 JA  
1
1
2
SOT-23  
Small Signal Diode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
A
Symbol  
Parameter  
Value  
Units  
V
Maximum Repetitive Reverse Voltage  
BAV70  
BAV74  
70  
50  
V
V
RRM  
I
I
Average Rectified Forward Current  
200  
mA  
F(AV)  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
FSM  
1.0  
2.0  
A
A
Pulse Width = 1.0 microsecond  
T
T
Storage Temperature Range  
-55 to +150  
150  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
350  
Units  
mW  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
357  
°C/W  
θJA  
Electrical Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Test Conditions  
Min.  
Max.  
Units  
V
V
Breakdown Voltage  
BAV70  
BAV74  
I
I
= 100µA  
= 5.0µA  
75  
50  
V
V
R
F
R
R
Forward Voltage  
Reverse Leakage  
BAV70  
I
I
I
I
I
= 1.0mA  
= 10mA  
= 50mA  
= 150mA  
= 100mA  
715  
855  
1.0  
1.25  
1.0  
mV  
mV  
V
V
V
F
F
F
F
F
BAV74  
BAV70  
I
V
V
V
V
V
= 25V, T = 150°C  
= 70V  
= 70V, T = 150°C  
= 50V  
60  
5.0  
100  
100  
100  
µA  
µA  
µA  
nA  
µA  
R
R
R
R
R
R
A
A
BAV74  
= 50V, T = 150°C  
A
C
Total Capacitance  
BAV70  
BAV74  
V
V
= 0V, f = 1.0MHz  
= 0V, f = 1.0MHz  
1.5  
2.0  
pF  
pF  
T
R
R
t
Reverse Recovery Time  
BAV70  
I
= I = 10mA, I = 1.0mA,  
6.0  
ns  
rr  
F
R
RR  
R
= 100Ω  
L
BAV74  
I
= I = 10mA, I = 1.0mA,  
4.0  
ns  
F
R
RR  
R
= 100Ω  
L
©2004 Fairchild Semiconductor Corporation  
BAV70 / 74, Rev. D1  

扫码用手机查看Datasheet
更方便

扫码关注嵌入式ARM