Image BLF888BS,112
型号:

BLF888BS,112

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: transistors RF mosfet uhf pwr ldmos transistor
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BLF888BS,112的详细信息

Manufacturer: NXP
Product Category: Transistors RF MOSFET
RoHS: Yes
Configuration: Dual
Transistor Polarity: N-Channel
Frequency: 470 MHz to 860 MHz
Gain: 21 dB at 860 MHz
Output Power: 250 W
Vds - Drain-Source Breakdown Voltage: 104 V
Id - Continuous Drain Current: 38 A
Vgs - Gate-Source Breakdown Voltage: 11 V
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-539B
Packaging: Tube
Brand: NXP Semiconductors
Factory Pack Quantity: 20
Vgs th - Gate-Source Threshold Voltage: 1.9 V