Image BSC884N03MS G
型号:

BSC884N03MS G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosFET N-kanal power mos
报错 收藏

BSC884N03MS G的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 4.5 mOhms
Configuration: Single Quad Drain Triple Source
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Mounting Style: SMD/SMT
Package / Case: TDSON-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 7.2 ns
Minimum Operating Temperature: - 55 C
Rise Time: 6.8 ns
Series: BSC884N03
Factory Pack Quantity: 5000
Typical Turn-Off Delay Time: 16 ns
Part # Aliases: BSC884N03MSGATMA1 SP000507414