Image BSD223P H6327
型号:

BSD223P H6327

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 阵列
描述: mosfet 2P-CH 20v 0.39a sot363
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BSD223P H6327的详细信息

Datasheets:
BSD223P:
Product Photos:
SOT-363 PKG:
Standard Package : 3,000
Category: Discrete Semiconductor Products
Family: FETs - Arrays
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 390mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Gate Charge (Qg) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 56pF @ 15V
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6