Image BSO051N03MS G
型号:

BSO051N03MS G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 30v 14a dso-8
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BSO051N03MS G的详细信息

Datasheets:
BSO051N03MS G:
Product Photos:
8-SOIC:
8-SOIC:
PCN Obsolescence/ EOL:
Multiple Devices 26/Jul/2012:
Standard Package : 2,500
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) @ Vds: 4300pF @ 15V
Power - Max: 1.56W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8
Other Names: BSO051N03MS G-NDBSO051N03MS GINTRBSO051N03MSGXUMA1SP000446068

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