Image BSO203P H
型号:

BSO203P H

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体分离式半导体
描述: mosfet P-kanal
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BSO203P H的详细信息

Manufacturer: Infineon
Product Category: MOSFET
RoHS: Yes
Brand: Infineon Technologies
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 20 V
Vgs - Gate-Source Breakdown Voltage: 12 V
Id - Continuous Drain Current: - 8.2 A
Rds On - Drain-Source Resistance: 21 mOhms
Configuration: Dual
Qg - Gate Charge: - 26 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2 W
Mounting Style: SMD/SMT
Package / Case: DSO-8
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 74 ns
Forward Transconductance - Min: 33 S
Minimum Operating Temperature: - 55 C
Rise Time: 55 ns
Series: BSO203
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 45 ns
Part # Aliases: BSO203PHXUMA1 SP000613858