BSS225H6327FTSA1的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 90 mA |
Rds On - Drain-Source Resistance: | 28 Ohms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
Qg - Gate Charge: | 3.9 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1 W |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-89-3 |
Packaging: | Reel |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Fall Time: | 41 ns |
Forward Transconductance - Min: | 0.05 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 38 ns |
Series: | BSS225 |
Factory Pack Quantity: | 1000 |
Typical Turn-Off Delay Time: | 62 ns |
Part # Aliases: | SP001047644 |
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