Image BUK763R1-40B,118
型号:

BUK763R1-40B,118

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: mosfet high perf trenchmos
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BUK763R1-40B,118的详细信息

Manufacturer: NXP
Product Category: MOSFET
RoHS: Yes
Brand: NXP Semiconductors
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 75 A
Rds On - Drain-Source Resistance: 3.1 mOhms
Configuration: Single
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 300 W
Mounting Style: SMD/SMT
Package / Case: SOT-404-3
Packaging: Reel
Channel Mode: Enhancement
Fall Time: 90 ns
Minimum Operating Temperature: - 55 C
Rise Time: 82 ns
Factory Pack Quantity: 800
Typical Turn-Off Delay Time: 141 ns
Part # Aliases: /T3 BUK763R1-40B