Image BUK965R8-100E,118
型号:

BUK965R8-100E,118

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: MOSfet N-channel trenchmos intermed level fet
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BUK965R8-100E,118的详细信息

Manufacturer: NXP
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 2.1 V
Id - Continuous Drain Current: 120 A
Rds On - Drain-Source Resistance: 5.8 mOhms
Pd - Power Dissipation: 357 W
Mounting Style: SMD/SMT
Package / Case: D2PAK-2
Packaging: Reel
Brand: NXP Semiconductors
Factory Pack Quantity: 800