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BUK965R8-100E,118的详细信息
Manufacturer: | NXP |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Vgs - Gate-Source Breakdown Voltage: | 2.1 V |
Id - Continuous Drain Current: | 120 A |
Rds On - Drain-Source Resistance: | 5.8 mOhms |
Pd - Power Dissipation: | 357 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Brand: | NXP Semiconductors |
Factory Pack Quantity: | 800 |
BUK965R8-100E,118相关文档
- SPICE model: BUK965R8-100E Spice model (v.1.0)
- Application note: Understanding Power MOSFET Datasheet Parameters (v.1.0)
- Thermal design: BUK965R8-100E Thermal model (v.1.0)
- Brochure: Advanced MOSFET technology fromthe Automotive Power experts (v.1.0)
- Selection guide: NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)
- Thermal model: BUK965R8-100E Thermal model (v.1.0)
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