Image CSD19531KCS
型号:

CSD19531KCS

厂商: Texas Instruments Texas Instruments
标准:
分类: 半导体分离式半导体
描述: mosfet 100v 6.4mohm pwr mosfet
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CSD19531KCS的详细信息

Manufacturer: Texas Instruments
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 7.7 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 2.7 V
Qg - Gate Charge: 38 nC
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 179 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Brand: Texas Instruments
Channel Mode: Enhancement
Fall Time: 4.1 ns
Minimum Operating Temperature: - 55 C
Rise Time: 7.2 ns
Series: CSD19531KCS
Factory Pack Quantity: 50
Tradename: NexFET
Typical Turn-Off Delay Time: 16 ns

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