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D882-TO-251的详细信息

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-251 Plastic-Encapsulate Transistors  
D882 TRANSISTORNPN)  
TO251  
FEATURES  
1.BASE  
Power dissipation  
PCM 1.25WTamb=25℃)  
Collector current  
ICM: 3A  
2.COLLECTOR  
3.EMITTER  
:
Collector-base voltage  
1
2
3
V(BR)CBO : 40V  
Operating and storage junction temperature range  
TJTstg: -55to +150℃  
ELECTRICAL CHARACTERISTICSTamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
40  
30  
6
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic= 100μAIE=0  
Ic= 10 mAIB=0  
IE= 100μAIC=0  
VCB= 40 VIE=0  
VCE= 30 VIB=0  
VEB= 6 VIC=0  
V
V
1
10  
1
µA  
µA  
µA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
hFE1)  
hFE2)  
VCE (sat)  
VBE (sat)  
VCE= 2 V, IC= 1A  
VCE= 2 V, IC= 100mA  
IC= 2A, IB= 0.2 A  
IC= 2A, IB= 0.2 A  
60  
32  
400  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
0.5  
1.5  
V
V
VCE= 5V, Ic=0.1A  
f =10MHz  
Transition frequency  
fT  
50  
MHz  
CLASSIFICATION OF hFE(1)  
Rank  
R
O
Y
GR  
200-400  
Range  
60-120  
100-200  
160-320  
TO-251 PACKAGE OUTLINE DIMENSIONS  
D
A
D1  
C1  
b1  
b
e
A1  
C
e1  
Dimensions In Millimeters  
Symbol  
Dimensions In Inches  
Min  
Max  
Min  
Max  
A
2.200  
1.020  
1.350  
0.500  
0.700  
0.430  
0.430  
6.350  
5.200  
5.400  
2.400  
1.270  
1.650  
0.700  
0.900  
0.580  
0.580  
6.650  
5.400  
5.700  
0.087  
0.040  
0.053  
0.020  
0.028  
0.017  
0.017  
0.250  
0.205  
0.213  
0.094  
0.050  
0.065  
0.028  
0.035  
0.023  
0.023  
0.262  
0.213  
0.224  
A1  
B
b
b1  
c
c1  
D
D1  
E
2.300TYP  
0.091TYP  
e
e1  
L
4.500  
7.500  
4.700  
7.900  
0.177  
0.295  
0.185  
0.311  

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