型号:

EPC1012

厂商: EPC
分类: 半导体FET - 单
描述: trans gan 200v 3A bumped die
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EPC1012的详细信息

Datasheets:
EPC1012:
Product Photos:
EPC1012 :
Mfg Application Notes:
Second Generation eGaN®:
FETs:
Thermal Performance of eGaN®:
FETs:
Assembling eGaN®:
FETS:
Using eGaN®:
FETs:
Video File:
EPC eGaN FETs -- Another Geek Moment | DigiKey:
RoHS Information:
Lead Free/RoHS Statement:
PCN Obsolescence/ EOL:
EPC1yyy Series 09/Sept/2011:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: eGaN®
Packaging : Digi-Reel®
FET Type: GaNFET N-Channel, Gallium Nitride
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) @ Vgs: 1.9nC @ 5V
Input Capacitance (Ciss) @ Vds: 110pF @ 100V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Other Names: 917-1006-6