首页 > EPC > 半导体 > FET - 单 > EPC2021ENG
Image EPC2021ENG
型号:

EPC2021ENG

厂商: EPC
标准:
分类: 半导体FET - 单
描述: trans gan 80v 2.5mo bumped die
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载 >>

EPC2021ENG的详细信息

Datasheets:
EPC2021 Datasheet Preliminary:
Product Photos:
EPC202xENG:
Mfg Application Notes:
Fourth Generation eGaN®:
FETs:
Featured Product:
Gen 4 eGaN® FETs:
Standard Package : 10
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: eGaN®
Packaging : Tray
FET Type: GaNFET N-Channel, Gallium Nitride
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Gate Charge (Qg) @ Vgs: -
Input Capacitance (Ciss) @ Vds: 1700pF @ 40V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Dynamic Catalog: N-Channel Logic Level Gate FETs
For Use With: 917-1068-ND - BOARD DEV EPC2001/21 EGAN917-1058-ND - BOARD DEV FOR EPC2021 80V EGAN
Other Names: 917-EPC2021ENGEPC2021ENGRB3

相关器件