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Image EPC8003TENGR
型号:

EPC8003TENGR

厂商: EPC
标准:
分类: 半导体FET - 单
描述: trans gan 100v 2.5A bumped die
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EPC8003TENGR的详细信息

Datasheets:
EPC8003 Preliminary Datasheet:
eGaN®:
FET Brief:
Product Photos:
917-EPC800:
Mfg Application Notes:
Assembling eGaN®:
FETS:
Die Attach Procedure:
Die Removal Procedure:
Standard Package : 2
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: eGaN®
Packaging : Tray
FET Type: GaNFET N-Channel, Gallium Nitride
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) @ Vgs: 0.315nC @ 50V
Input Capacitance (Ciss) @ Vds: 38pF @ 50V
Power - Max: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Other Names: 917-EPC8003AENGR917-EPC8003AENGR-ND917-EPC8003TENGREPC8003AENGR