Image IGOT60R070D1AUMA1
型号: IGOT60R070D1AUMA1
厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体晶体管
描述: mosfet 600v coolgan power transistor
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IGOT60R070D1AUMA1的详细信息

制造商: Infineon 产品种类
RoHS: 详细信息
技术: GaN
安装风格: SMD/SMT
封装 / 箱体: PG-DSO-20
通道数量: 1 Channel
晶体管极性: N-Channel
Vds-漏源极击穿电压: 600 V
Id-连续漏极电流: 31 A
Rds On-漏源导通电阻: 70 mOhms
Vgs th-栅源极阈值电压: 0.9 V
Vgs - 栅极-源极电压: - 10 V
Qg-栅极电荷: 5.8 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 125 W
通道模式: Enhancement
商标名: CoolGaN
封装: Cut Tape
封装: Reel
晶体管类型: 1 N-Channel
商标: Infineon Technologies
下降时间: 13 ns
HTS Code: 8541290095
产品类型: MOSFET
上升时间: 9 ns
工厂包装数量: 800
子类别: MOSFETs
典型关闭延迟时间: 15 ns
典型接通延迟时间: 15 ns
零件号别名: SP001505772
IGOT60R070D1  
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Features  
Enhancement mode transistor – Normally OFF switch  
Ultra fast switching  
No reverse-recovery charge  
20  
1
11  
Capable of reverse conduction  
1
Low gate charge, low output charge  
Superior commutation ruggedness  
Qualified for industrial applications according to JEDEC  
Standards (JESD47 and JESD22)  
10  
20  
10  
11  
Gate  
Drain  
9, 10  
13,14,15,16,17,18  
8
Benefits  
Kelvin Source  
Source  
Improves system efficiency  
Improves power density  
Enables higher operating frequency  
System cost reduction savings  
Reduces EMI  
1,2,3,4,5,6,7, heatslug  
11,12,19,20  
not connected  
Applications  
Industrial, telecom, datacenter SMPS based on the half-bridge topology  
(half-bridge topologies for hard and soft switching such as Totem pole PFC,  
high frequency LLC).  
For other applications: review CoolGaNreliability white paper and contact  
Infineon regional support  
Table 1  
Key Performance Parameters at Tj = 25 °C  
Parameter  
VDS,max  
RDS(on),max  
QG,typ  
Value  
600  
70  
5.8  
60  
Unit  
V
mΩ  
nC  
A
ID,pulse  
Qoss @ 400 V  
Qrr  
41  
0
nC  
nC  
Table 2  
Ordering Information  
Type / Ordering Code  
IGOT60R070D1  
Package  
Marking  
Related links  
PG-DSO-20-87  
60R070D1  
see Appendix A  
Final Data Sheet  
Please read the Important Notice and Warnings at the end of this document  
Rev. 2.11  
www.infineon.com  
2018-10-12  
 
 
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Final Data Sheet  
2
Rev. 2.11  
2018-10-12  
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
1
Maximum ratings  
at Tj = 25 °C, unless otherwise specified.  
Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact  
your local Infineon sales office.  
Table 3  
Maximum ratings  
Parameter  
Symbol  
Values  
Unit  
Note/Test Condition  
VGS = 0 V  
Min. Typ. Max.  
Drain Source Voltage 1  
VDS,max  
ID  
-
-
600  
V
A
Continuous current, drain source  
-
-
-
-
-
-
31  
20  
14  
TC = 25 °C; Tj = Tj, max  
TC = 100 °C; Tj = Tj, max  
TC = 125 °C; Tj = Tj, max  
Pulsed current, drain source 2 3  
Pulsed current, drain source 3 4  
ID,pulse  
-
-
60  
A
A
-
-
35  
ID,pulse  
Gate current, continuous 3 4 5  
Gate current, pulsed 3 5  
IG,avg  
-
-
-
-
20  
mA Tj = -55 °C to 150 °C;  
IG,pulse  
2000  
mA Tj = -55 °C to 150 °C;  
tPULSE = 50 ns, f=100 kHz  
Gate source voltage, continuous 5  
Gate source voltage, pulsed 5  
VGS  
-10  
-25  
-
-
-
-
V
V
Tj = -55 °C to 150 °C;  
VGS,pulse  
Tj = -55 °C to 150 °C;  
tPULSE = 50 ns, f = 100 kHz;  
open drain  
Power dissipation  
Ptot  
Tj  
-
-
-
-
125  
150  
150  
W
TC = 25 °C  
Operating temperature  
Storage temperature  
-55  
°C  
Tstg  
°C Max shelf life depends on  
storage conditions.  
-55  
Drain-source voltage slew-rate  
dV/dt  
200  
V/ns  
1
All devices are 100% tested at IDS = 12.2 mA to assure VDS ≥ 800 V  
Limits derived from product characterization, parameter not measured during production  
Ensure that average gate drive current, IG,avg is ≤ 20 mA. Please see figure 27 for IG,avg, IG,pulse and IG details  
Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application.  
We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for  
details.  
2
3
4
5
Final Data Sheet  
3
Rev. 2.11  
2018-10-12  
 
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
2
Thermal characteristics  
Table 4  
Thermal characteristics  
Parameter  
Symbol  
Values  
Unit  
Note/Test Condition  
Min. Typ. Max.  
Thermal resistance, junction-case  
Reflow soldering temperature  
RthJC  
Tsold  
-
-
-
-
1
°C/W  
245  
°C MSL3  
Final Data Sheet  
4
Rev. 2.11  
2018-10-12  
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
3
Electrical characteristics  
at Tj = 25 °C, unless specified otherwise  
Table 5  
Static characteristics  
Parameter  
Symbol  
VGS(th)  
Values  
Unit  
V
Note/Test Condition  
Min. Typ. Max.  
Gate threshold voltage  
0.9  
0.7  
1.2  
1.0  
1.6  
1.4  
IDS = 2.6 mA; VDS = 10 V; Tj =25 °C  
IDS = 2.6 mA; VDS = 10 V; Tj =125 °C  
Drain-Source leakage current  
-
-
1
20  
100  
-
µA VDS = 600 V; VGS = 0 V; Tj = 25 °C  
VDS = 600 V; VGS = 0 V; Tj = 150 °C  
IDSS  
Drain-Source leakage current at  
application conditions1  
Gate-Source leakage current  
-
60  
-
μA  
IDSSapp  
IGSS  
VDS = 400 V; VGS = 0 V; Tj = 125 °C  
-1  
-1  
-
-
-
-
mA VDS = 0 V; VGS = -10 V; Tj = 25 °C  
VDS = 0 V; VGS = -10 V; Tj = 125 °C  
Drain-Source on-state resistance  
Gate resistance  
-
-
0.055 0.070  
IG = 26.1 mA; ID = 8 A; Tj = 25 °C  
IG = 26.1 mA; ID = 8 A; Tj = 150 °C  
RDS(on)  
RG,int  
0.100  
-
-
0.78  
-
LCR impedance measurement;  
f = fres ; open drain;  
Table 6  
Dynamic characteristics  
Parameter Symbol  
Values  
Unit  
Note/Test Condition  
Min. Typ. Max.  
VGS = 0 V; VDS = 400 V;  
f = 1 MHz  
380  
72  
-
-
-
-
-
Input capacitance  
Ciss  
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
VGS = 0 V; VDS = 400 V;  
f = 1 MHz  
Output capacitance  
Coss  
Crss  
Reverse Transfer capacitance  
VGS = 0 V; VDS = 400 V;  
f = 1 MHz  
0.3  
80  
Effective output capacitance,  
energy related 2  
Co(er)  
Co(tr)  
VDS = 0 to 400 V  
Effective output capacitance,  
time related 3  
VGS = 0 V; VDS = 0 to 400 V;  
Id = const  
102.5  
41  
Output charge  
Turn- on delay time  
Turn- off delay time  
Rise time  
Qoss  
td(on)  
td(off)  
tr  
-
-
-
-
-
-
-
-
-
-
15  
15  
ns  
ns  
ns  
ns  
9
13  
tf  
Fall time  
1 Parameter represents end of use leakage in applications  
2 Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V  
3 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V  
Final Data Sheet  
5
Rev. 2.11  
2018-10-12  
 
 
 
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Table 7  
Gate charge characteristics  
Parameter Symbol  
Values  
Unit  
nC  
Note/Test Condition  
Min. Typ. Max.  
IGS = 0 to 10 mA; VDS= 400 V;  
ID= 8 A  
5.8  
-
Gate charge  
Table 8  
QG  
-
Reverse conduction characteristics  
Parameter Symbol  
Values  
Unit  
Note/Test Condition  
Min. Typ. Max.  
2.2  
2.5  
Source-Drain reverse voltage  
Pulsed current, reverse  
VSD  
-
V
A
VGS = 0 V; ISD = 8 A  
IG = 26.1 mA  
-
-
-
-
60  
IS,pulse  
Reverse recovery charge  
Reverse recovery time  
Qrr  
0
0
0
-
-
-
IS = 8 A, VDS = 400 V  
-
-
-
nC  
ns  
A
trr  
Peak reverse recovery current  
Irrm  
1 Excluding Qoss  
Final Data Sheet  
6
Rev. 2.11  
2018-10-12  
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
4
Electrical characteristics diagrams  
at Tj = 25 °C, unless specified otherwise  
Figure 1  
Power dissipation  
Figure 2  
Max. transient thermal impedance  
140  
1
120  
100  
80  
60  
40  
20  
0
0.1  
D=  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
single pulse  
0.01  
0.001  
0.01  
0.10  
1.00  
10.00  
100.00 1000.00  
0
20  
40  
60  
80  
100 120 140 160  
Rectangular Pulse Duration (ms)  
TCASE (°C)  
Ptot=f(Tc)  
ZthJC=f(tp, D)  
Figure 3  
Safe operating area  
Figure 4  
Safe operating area  
100  
100  
tp = 20 ns  
tp = 10 μs  
tp = 100 μs  
tp = 20 ns  
tp = 10 μs  
tp = 1 ms  
DC  
tp = 100 μs  
10  
1
10  
Limited by  
RDS(on)  
Limited by  
RDS(on)  
tp = 1 ms  
DC  
1
0.1  
0.1  
0.01  
1
0.01  
10  
100  
1000  
1
10  
100  
1000  
VDS (V)  
VDS (V)  
ID=f(VDS); TC = 25 °C  
ID=f(VDS); TC = 125 °C  
Final Data Sheet  
7
Rev. 2.11  
2018-10-12  
 
 
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Figure 9  
Typ. Drain-source on-state resistance  
Figure 10 Drain-source on-state resistance  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
IG=0.26 mA  
IG=0.1 mA  
IG=1 mA  
IG=10 mA  
VGS = 3 V  
60  
IG = 26.1 mA  
IG=2.6 mA  
IG=26.1 mA  
40  
20  
0
-50  
0
50  
100  
150  
0
10  
20  
30  
40  
50  
60  
Tj [oC]  
ID [A]  
RDS(on)=f(ID,IG); Tj = 125 °C  
RDS(on)=f(Tj); ID = 8 A  
Figure 11 Typ. gate characteristics forward  
Figure 12 Typ. gate characteristics reverse  
VGS (V)  
500  
450  
400  
350  
-25  
-20  
-15  
-10  
-5  
0
0
-50  
-100  
-150  
-200  
-250  
-300  
-350  
300  
250  
200  
150  
100  
50  
125°C  
25°C  
-55°C  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
VGS (V)  
IGS=f(VGS,Tj); open drain  
IGS=f(VGS); Tj = 25 °C  
Final Data Sheet  
9
Rev. 2.11  
2018-10-12  
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Figure 13 Typ. transfer characteristics  
Figure 14 Typ. transfer characteristics  
I I =f(V ); VDS = 8 V; T = 25 °C  
I I =f(V ); VDS = 8 V ; T = 125 °C  
,
,
D
G
GS  
j
D
G
GS  
j
Figure 15 Typ. channel reverse characteristics  
Figure 16 Typ. channel reverse characteristics  
VDS (V)  
VDS (V)  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-8  
-6  
-4  
-2  
0
0
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-10  
-5V  
-3V  
-4V  
-2V  
-5V  
-1V  
0V  
-1V  
-4V  
-3V  
-2V  
0V  
VGS  
VGS  
VDS=f(ID, VGS); Tj = 25 °C  
VDS=f(ID, VGS); Tj = 125 °C  
Final Data Sheet  
10  
Rev. 2.11  
2018-10-12  
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Figure 17 Typ. channel reverse characteristics  
Figure 18 Typ. channel reverse characteristics  
60  
60  
50  
40  
30  
20  
10  
0
+4V  
50  
40  
30  
20  
10  
0
0V  
+4V  
0V  
0
2
4
6
8
0
2
4
6
8
10  
VSD (V)  
VSD (V)  
ID=f(VDS, VGS); Tj = 25 °C  
ID=f(VDS, VGS); Tj = 125 °C  
Figure 19 Typ. gate charge  
Figure 20 Typ. capacitances  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1,000.0  
Ciss  
Coss  
100.0  
10.0  
1.0  
Crss  
0.1  
0
100  
200  
300  
400  
500  
0
1
2
3
4
5
6
Q (nC)  
VDS (V)  
VGS = f(QG); VDCLINK = 400 V; ID = 8 A  
CxSS = f(VDS)  
Final Data Sheet  
11  
Rev. 2.11  
2018-10-12  
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
Figure 21 Typ. output charge  
Figure 22 Typ. Coss stored Energy  
10  
9
8
7
6
5
4
3
2
1
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
0
0
100  
200  
300  
VDS (V)  
400  
500  
0
100  
200  
300  
400  
500  
VDS (V)  
QOSS = f(VDS)  
EOSS = f(VDS)  
Final Data Sheet  
12  
Rev. 2.11  
2018-10-12  
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
5
Test Circuits  
Figure 23 
Switching times with inductive load  
Figure 24 
Switching times waveform  
D
RSS  
CG  
T1  
RON  
L
G
SK  
ROFF  
+
S
D
ID  
RSS  
CG  
T2  
RON  
t
G
SK  
ROFF  
S
ID = 8A, RON = 10 Ω; ROFF = 10 Ω; RSS = 820 Ω; CG = 2 nF;  
VDRV = 12V  
Figure 25 Reverse Channel Characteristics Test  
Figure 26 Typical Reverse Channel Recovery  
D
RSS  
CG  
T1  
RON  
L
G
SK  
ROFF  
+
S
D
ID  
RSS  
CG  
T2  
RON  
G
SK  
ROFF  
S
ID = 8A, RON = 10 Ω; ROFF = 10 Ω; RSS = 820 Ω; CG = 2 nF;  
VDRV = 12V  
The recovery charge is QOSS only, no additional Qrr  
Figure 27 Gate current switching waveform  
IG,pulse  
IG  
IG, avg  
t
Final Data Sheet  
13  
Rev. 2.11  
2018-10-12  
 
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
6
Package Outlines  
Figure 28 PG-DSO-20-87 Package Outline, dimensions (mm)  
Final Data Sheet  
14  
Rev. 2.11  
2018-10-12  
 
IGOT60R070D1  
600V CoolGaNenhancement-mode Power Transistor  
8
Revision History  
Major changes since the last revision  
Revision Date Description of changes  
2.0  
2018-04-24  
Final version release  
2.1  
2018-07-23  
2018-10-12  
Updated DSO-20-87 package outline drawing in page14  
2.11  
Updated application section; added Appendix A and Fig. 27; updated maximum  
rating table footnotes, switching times and figures.  
Final Data Sheet  
16  
Rev. 2.11  
2018-10-12  
 
Trademarks of Infineon Technologies AG  
µHVIC, µIPM, µPFC, AU-ConvertIR, AURIX, C166, CanPAK, CIPOS, CIPURSE, CoolDP, CoolGaN, COOLiR, CoolMOS, CoolSET, CoolSiC,  
DAVE, DI-POL, DirectFET, DrBlade, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, eupec, FCOS, GaNpowIR,  
HEXFET, HITFET, HybridPACK, iMOTION, IRAM, ISOFACE, IsoPACK, LEDrivIR, LITIX, MIPAQ, ModSTACK, my-d, NovalithIC, OPTIGA,  
OptiMOS, ORIGA, PowIRaudio, PowIRStage, PrimePACK, PrimeSTACK, PROFET, PRO-SIL, RASIC, REAL3, SmartLEWIS, SOLID FLASH,  
SPOC, StrongIRFET, SupIRBuck, TEMPFET, TRENCHSTOP, TriCore, UHVIC, XHP, XMC™  
Trademarks updated November 2015  
Other Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
IMPORTANT NOTICE  
The information given in this document shall in no For further information on the product, technology,  
Edition 2018-10-12  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
Published by  
characteristics (“Beschaffenheitsgarantie”) .  
contact your nearest Infineon Technologies office  
(www.infineon.com).  
Infineon Technologies AG  
81726 München, Germany  
With respect to any examples, hints or any typical  
values stated herein and/or any information  
regarding the application of the product, Infineon  
Technologies hereby disclaims any and all  
warranties and liabilities of any kind, including  
without limitation warranties of non-infringement  
of intellectual property rights of any third party.  
WARNINGS  
Due to technical requirements products may  
contain dangerous substances. For information on  
the types in question please contact your nearest  
Infineon Technologies office.  
© 2018 Infineon Technologies AG.  
All Rights Reserved.  
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Document reference  
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The data contained in this document is exclusively  
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responsibility of customer’s technical departments  
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