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IN4148的详细信息

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SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
IN4148  
SILICON EPITAXIAL PLANAR  
TECHNICAL  
SWITCHING DIODE  
REVERSE VOLTAGE: 75V  
FORWARD CURRENT: 150mA  
SPECIFICATION  
FEATURES  
• Small glass structure ensures high reliability  
DO - 35  
• Fast switching  
• Low leakage  
1.0 (25.4)  
MIN.  
• High temperature soldering guaranteed:  
250oC/10S/9.5mm lead length  
at 5 lbs tension  
.060 (1.5)  
.090 (2.3)  
DIA.  
.120 (3.0)  
.200 (5.1)  
MECHANICAL DATA  
• Terminal: Plated axial leads solderable per  
1.0 (25.4)  
MIN.  
MIL-STD 202E, method 208C  
.018 (0.46)  
.022 (0.56)  
• Case: Glass,hermetically sealed  
• Polarity: Color band denotes cathode  
• Mounting position: Any  
DIA.  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND CHARACTERISTICS  
(Ratings at 25oC ambient temperature unless otherwise specified)  
RATINGS  
SYMBOL  
VALUE  
UNITS  
VR  
VRM  
IO  
Reverse Voltage  
75  
V
V
Peak Reverse Voltage  
100  
Forward Current (average)  
Repetitive Forward Peak Current  
Forward Voltage (IF=10mA)  
Reverse Current (VR=20V)  
Reverse Current (VR=75V)  
150  
mA  
mA  
V
IFRM  
VF  
300  
1
25  
nA  
µA  
A
IR1  
5
Reverse Current (VR=20V,TJ=100oC)  
IR2  
Ct  
50  
Capacitance  
(note 1)  
(note 2)  
(note 3)  
4
4
pF  
IF  
Reverse Recovery Time  
nS  
oC/mW  
oC  
Rθ(ja)  
Thermal Resistance (junction to ambient)  
0.35  
T
STG,TJ  
Operating Junction and Storage Temperature Range  
Notes:  
-55 +175  
1: VR=0V, f=1 MHz  
2: IF=10mA to IR=1mA, VR=6V, RL=100  
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.