Image IPB014N06N
型号:

IPB014N06N

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 60v 34a to263-7
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IPB014N06N的详细信息

Datasheets:
IPB014N06N:
Product Photos:
TO-263-7, D2Pak:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Cut Tape (CT)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 143µA
Gate Charge (Qg) @ Vgs: 106nC @ 10V
Input Capacitance (Ciss) @ Vds: 7800pF @ 30V
Power - Max: 3W
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: PG-TO263-7
Dynamic Catalog: N-Channel Logic Level Gate FETs
Other Names: IPB014N06N-NDIPB014N06NCT