Datasheet下载地址
本地下载 >> 厂商下载2 >> 第三方平台下载 >> |
IPB107N20N3 G的详细信息
Manufacturer: | Infineon |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Infineon Technologies |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 200 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 88 A |
Rds On - Drain-Source Resistance: | 10.7 mOhms |
Configuration: | Single |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Qg - Gate Charge: | 65 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 300 W |
Mounting Style: | SMD/SMT |
Package / Case: | D2PAK-2 |
Packaging: | Reel |
Forward Transconductance - Min: | 141 S, 71 S |
Minimum Operating Temperature: | - 55 C |
Series: | IPB107N20 |
Factory Pack Quantity: | 1000 |
Tradename: | OptiMOS |
Part # Aliases: | IPB107N20N3GATMA1 SP000676406 |
扫码手机查看更方便
同类器件