Image IPB13N03LB G
型号:

IPB13N03LB G

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 30v 30a TO-263
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IPB13N03LB G的详细信息

Datasheets:
IPB13N03LB:
Product Photos:
TO-263:
PCN Obsolescence/ EOL:
Multiple Devices 04/Jun/2009:
Standard Package : 1,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) @ Vgs: 11nC @ 5V
Input Capacitance (Ciss) @ Vds: 1355pF @ 15V
Power - Max: 52W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: P-TO263-3
Other Names: IPB13N03LB G-NDIPB13N03LBGINTRIPB13N03LBGXTSP000103307

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