Image IPB80N06S3L-05
型号:

IPB80N06S3L-05

厂商: Infineon Technologies Infineon Technologies
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 55v 80a TO-263
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IPB80N06S3L-05的详细信息

Datasheets:
IPB/IPI/IPP80N06S3L-05:
Product Photos:
TO-263:
PCN Obsolescence/ EOL:
Multiple Devices 22/Jul/2010:
Standard Package : 1,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: OptiMOS™
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 69A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 115µA
Gate Charge (Qg) @ Vgs: 273nC @ 10V
Input Capacitance (Ciss) @ Vds: 13060pF @ 25V
Power - Max: 165W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Other Names: IPB80N06S3L-05-NDIPB80N06S3L-05INTRIPB80N06S3L05XTSP000102221