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IPI037N08N3 G的详细信息
Manufacturer: | Infineon |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Infineon Technologies |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 100 A |
Rds On - Drain-Source Resistance: | 3.5 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 214 W |
Package / Case: | TO-262-3 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 14 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 79 ns |
Series: | IPI037N08 |
Factory Pack Quantity: | 500 |
Tradename: | OptiMOS |
Typical Turn-Off Delay Time: | 45 ns |
Part # Aliases: | IPI037N08N3GHKSA1 SP000454278 |
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