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IR2110S的详细信息

Datasheets:
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF:
PCN Obsolescence/ EOL:
Leaded Devices 09/Jul/2013:
Leaded Devices Revision-2 09/Jul/2013:
Standard Package : 45
Category: Integrated Circuits (ICs)
Family: PMIC - MOSFET, Bridge Drivers - External Switch
Series: -
Packaging : Tube
Configuration: High and Low Side, Independent
Input Type: Non-Inverting
Delay Time: 120ns
Current - Peak: 2A
Number of Configurations: 1
Number of Outputs: 2
High Side Voltage - Max (Bootstrap): 500V
Voltage - Supply: 3.3 V ~ 20 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC
Other Names: *IR2110S
Data Sheet No. PD60147 rev.  
U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF  
HIGH AND LOW SIDE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +500V or +600V  
Tolerant to negative transient voltage  
dV/dt immune  
V
(IR2110) 500V max.  
OFFSET  
(IR2113) 600V max.  
I +/-  
O
2A / 2A  
10 - 20V  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for both channels  
3.3V logic compatible  
V
OUT  
Separate logic supply range from 3.3V to 20V  
t
(typ.)  
120 & 94 ns  
on/off  
Logic and power ground ± 5V offset  
CMOS Schmitt-triggered inputs with pull-down  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Outputs in phase with inputs  
Delay Matching (IR2110) 10 ns max.  
(IR2113) 20ns max.  
Packages  
Description  
The IR2110/IR2113 are high voltage, high speed power MOSFET and  
IGBT drivers with independent high and low side referenced output chan-  
nels. Proprietary HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction. Logic inputs are compatible with  
standard CMOS or LSTTL output, down to 3.3V logic. The output  
drivers feature a high pulse current buffer stage designed for minimum  
16-Lead SOIC  
IR2110S/IR2113S  
14-Lead PDIP  
IR2110/IR2113  
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The  
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which  
operates up to 500 or 600 volts.  
Typical Connection  
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(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical  
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
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