Image IRF4905
型号: IRF4905
厂商: International Rectifier International Rectifier
标准:
分类: 半导体
描述: power mosfet(vdss=-55v, rds(on)=0.02ohm, Id=-74a)
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PD - 9.1280C  
IRF4905  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = -55V  
RDS(on) = 0.02Ω  
G
l P-Channel  
l Fully Avalanche Rated  
Description  
ID = -74A  
S
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrialapplicationsatpowerdissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220  
contribute to its wide acceptance throughout the  
industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
-74  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-52  
A
-260  
200  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
1.3  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy‚  
Avalanche Current  
930  
mJ  
-38  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
20  
mJ  
-5.0  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
0.75  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
8/25/97