Image IRF540
型号: IRF540
厂商: Vishay Siliconix Vishay Siliconix
分类: 半导体分离式半导体
描述: mosfet N-chan 100v 28 amp
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IRF540的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: No
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 28 A
Rds On - Drain-Source Resistance: 77 mOhms
Configuration: Single
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 150 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Fall Time: 43 ns
Minimum Operating Temperature: - 55 C
Rise Time: 44 ns
Factory Pack Quantity: 50
Typical Turn-Off Delay Time: 53 ns
IRF540, SiHF540  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
100  
Available  
• Repetitive Avalanche Rated  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) ()  
VGS = 10 V  
0.077  
RoHS*  
Qg (Max.) (nC)  
72  
11  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
32  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
Configuration  
Single  
D
DESCRIPTION  
TO-220AB  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220AB package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220AB contribute to its  
wide acceptance throughout the industry.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220AB  
IRF540PbF  
SiHF540-E3  
IRF540  
Lead (Pb)-free  
SnPb  
SiHF540  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
100  
± 20  
28  
V
VGS  
T
C = 25 °C  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
20  
A
Pulsed Drain Currenta  
IDM  
110  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
230  
28  
EAR  
15  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
150  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12).  
c. ISD 28 A, dI/dt 170 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91021  
S11-0510-Rev. B, 21-Mar-11  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000