Image IRF640
型号: IRF640
厂商: Vishay Siliconix Vishay Siliconix
分类: 半导体分离式半导体
描述: mosfet N-chan 200v 18 amp
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IRF640的详细信息

Manufacturer: Vishay
Product Category: MOSFET
RoHS: No
Brand: Vishay / Siliconix
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 180 mOhms
Configuration: Single
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Fall Time: 36 ns
Minimum Operating Temperature: - 55 C
Rise Time: 51 ns
Factory Pack Quantity: 50
Typical Turn-Off Delay Time: 45 ns
IRF640, SiHF640  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
200  
Available  
• Repetitive Avalanche Rated  
• Fast Switching  
R
DS(on) (Ω)  
VGS = 10 V  
0.18  
RoHS*  
Qg (Max.) (nC)  
70  
13  
COMPLIANT  
• Ease of Paralleling  
Q
Q
gs (nC)  
gd (nC)  
• Simple Drive Requirements  
39  
Configuration  
Single  
• Compliant to RoHS Directive 2002/95/EC  
D
DESCRIPTION  
TO-220AB  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220AB package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220AB contribute to its  
wide acceptance throughout the industry.  
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
TO-220AB  
IRF640PbF  
SiHF640-E3  
IRF640  
Package  
Lead (Pb)-free  
SnPb  
SiHF640  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
200  
V
VGS  
± 20  
TC = 25 °C  
TC = 100 °C  
18  
Continuous Drain Current  
V
GS at 10 V  
ID  
11  
A
Pulsed Drain Currenta  
IDM  
72  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
580  
18  
EAR  
13  
125  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
10  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 Ω, IAS = 18 A (see fig. 12).  
c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91036  
S11-0509-Rev. B, 21-Mar-11  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000