IXFN82N60P的详细信息
Manufacturer: | IXYS |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | IXYS |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 72 A |
Rds On - Drain-Source Resistance: | 75 mOhms |
Configuration: | Single Dual Source |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Qg - Gate Charge: | 240 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.04 kW |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-227B-4 |
Packaging: | Tube |
Channel Mode: | Enhancement |
Fall Time: | 24 ns |
Forward Transconductance - Min: | 50 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 23 ns |
Series: | IXFN82N60 |
Factory Pack Quantity: | 10 |
Tradename: | Polar, HiPerFET |
Typical Turn-Off Delay Time: | 79 ns |
Unit Weight: | 38 g |
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