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ON Semiconductor 
MJD31CT4G的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | Transistors Bipolar - BJT |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Configuration： | Single |
| Transistor Polarity： | NPN |
| Collector- Base Voltage VCBO： | 100 V |
| Collector- Emitter Voltage VCEO Max： | 100 V |
| Emitter- Base Voltage VEBO： | 5 V |
| Collector-Emitter Saturation Voltage： | 1.2 V |
| Maximum DC Collector Current： | 3 A |
| Gain Bandwidth Product fT： | 3 MHz |
| Maximum Operating Temperature： | + 150 C |
| Mounting Style： | SMD/SMT |
| Package / Case： | TO-252-3 (DPAK) |
| Continuous Collector Current： | 3 A |
| DC Collector/Base Gain hfe Min： | 25 |
| Maximum Power Dissipation： | 1.56 W |
| Minimum Operating Temperature： | - 65 C |
| Packaging： | Reel |
| Series： | MJD31C |
| Factory Pack Quantity： | 2500 |
MJD31CT4G相关文档
- PCN: On Semi - IPCN - 7-23-10
- EOL: On Semi - PCN - 9-17-10
- Package Drawing: DPAK 3 LEAD Single Gauge Surface Mount
- Simulation Model: SPICE2 Model
- Package Drawing: IPAK (DPAK−3 Insertion Mount)
- Simulation Model: Saber Model
- Simulation Model: SPICE3 Model
- Simulation Model: PSpice Model
- PCN: Final Product / Process Change Notification
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