Image MMBT3904
型号: MMBT3904
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt sot-23 npn gen pur
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MMBT3904的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 40 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.3 V
Maximum DC Collector Current: 0.2 A
Gain Bandwidth Product fT: 300 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23
Brand: Fairchild Semiconductor
Continuous Collector Current: 0.2 A
DC Collector/Base Gain hfe Min: 100
DC Current Gain hFE Max: 300
Maximum Power Dissipation: 625 mW
Minimum Operating Temperature: - 55 C
Packaging: Reel
Series: MMBT3904
Factory Pack Quantity: 3000
Part # Aliases: MMBT3904_NL
Unit Weight: 60 mg
October 2011  
2N3904 / MMBT3904 / PZT3904  
NPN General Purpose Amplifier  
Features  
• This device is designed as a general purpose amplifier and switch.  
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.  
PZT3904  
2N3904  
MMBT3904  
C
C
E
E
C
B
TO-92  
SOT-23  
B
SOT-223  
Mark:1A  
EBC  
Absolute Maximum Ratings* T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Voltage  
Value  
Units  
V
V
V
V
40  
60  
CEO  
CBO  
EBO  
Collector-Base Voltage  
V
Emitter-Base Voltage  
6.0  
V
I
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
200  
mA  
°C  
C
T T  
-55 to +150  
J, stg  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics T = 25°C unless otherwise noted  
a
Max.  
Symbol  
Parameter  
Units  
2N3904  
*MMBT3904  
**PZT3904  
Total Device Dissipation  
625  
5.0  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
P
D
Derate above 25°C  
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
83.3  
200  
°C/W  
°C/W  
θJC  
357  
125  
θJA  
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".  
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm .  
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© 2011 Fairchild Semiconductor Corporation  
2N3904 / MMBT3904 / PZT3904 Rev. B0  
www.fairchildsemi.com  
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