Image MMBT4401
型号: MMBT4401
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt sot-23 npn gen pur
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MMBT4401的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 60 V
Collector- Emitter Voltage VCEO Max: 40 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.75 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 250 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23
Brand: Fairchild Semiconductor
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 100
DC Current Gain hFE Max: 300
Maximum Power Dissipation: 350 mW
Minimum Operating Temperature: - 55 C
Packaging: Reel
Series: MMBT4401
Factory Pack Quantity: 3000
Part # Aliases: MMBT4401_NL
Unit Weight: 60 mg
2N4401  
MMBT4401  
C
E
TO-92  
C
B
SOT-23  
Mark: 2X  
B
E
NPN General Pupose Amplifier  
This device is designed for use as a medium power amplifier and  
switch requiring collector currents up to 500 mA.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N4401  
*MMBT4401  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
2N4401/MMBT4401, Rev A  

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