Image MMBT5551
型号: MMBT5551
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt sot-23 npn gen pur
PDF: 预览
报错 收藏

Datasheet下载地址

本地下载 >> 厂商下载2 >> 第三方平台下载 >>

MMBT5551的详细信息

Manufacturer: Fairchild Semiconductor
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 180 V
Collector- Emitter Voltage VCEO Max: 160 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.2 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 300 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23
Brand: Fairchild Semiconductor
Continuous Collector Current: 0.6 A
DC Collector/Base Gain hfe Min: 80
DC Current Gain hFE Max: 250
Maximum Power Dissipation: 350 mW
Minimum Operating Temperature: - 55 C
Packaging: Reel
Series: MMBT5551
Factory Pack Quantity: 3000
Part # Aliases: MMBT5551_NL
Unit Weight: 60 mg
June 2013  
2N5551 / MMBT5551  
NPN General-Purpose Amplifier  
Description  
This device is designed for general-purpose high-voltage  
amplifiers and gas discharge display drivers.  
2N5551  
MMBT5551  
3
2
TO-92  
SOT-23  
1
Marking: 3S  
1. Base 2. Emitter 3. Collector  
Ordering Information(1)  
Part Number  
2N5551TA  
Top Mark  
5551  
Package  
TO-92 3L  
TO-92 3L  
TO-92 3L  
TO-92 3L  
SOT-23 3L  
Packing Method  
Ammo  
2N5551TFR  
2N5551TF  
5551  
Tape and Reel  
Tape and Reel  
Bulk  
5551  
2N5551BU  
MMBT5551  
5551  
3S  
Tape and Reel  
Note:  
1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)  
Suffix “-Y” means h 180~240 in 2N5551 (Test condition: I = 10 mA, V = 5.0 V)  
FE  
C
CE  
© 2009 Fairchild Semiconductor Corporation  
2N5551 / MMBT5551 Rev. 1.1.0  
www.fairchildsemi.com  
1

MMBT5551相关文档