Image NP110N055PUJ-E2B-AY
型号:

NP110N055PUJ-E2B-AY

厂商: Renesas Electronics America
标准:
分类: 半导体FET - 单
描述: mosfet N-CH 55v MP-25zp/TO-263
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NP110N055PUJ-E2B-AY的详细信息

Datasheets:
NP110N055PUJ:
Product Photos:
TO-263:
PCN Obsolescence/ EOL:
Multiple Devices 28/Aug/2013:
PCN Assembly/Origin:
Wafer Fabrication Site Change 10/Oct/2013:
Standard Package : 1,000
Category: Discrete Semiconductor Products
Family: FETs - Single
Series: -
Packaging : Tape & Reel (TR)
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 110A (Ta)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 230nC @ 10V
Input Capacitance (Ciss) @ Vds: 14250pF @ 25V
Power - Max: 1.8W
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263