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ON Semiconductor 
Datasheet下载地址
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NTLJS3113PTAG的详细信息
| Manufacturer： | ON Semiconductor |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Brand： | ON Semiconductor |
| Transistor Polarity： | P-Channel |
| Vds - Drain-Source Breakdown Voltage： | - 20 V |
| Vgs - Gate-Source Breakdown Voltage： | 8 V |
| Id - Continuous Drain Current： | 5.8 A |
| Rds On - Drain-Source Resistance： | 42 mOhms |
| Configuration： | Single Quad Drain |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 1.9 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | WDFN-6 |
| Packaging： | Reel |
| Channel Mode： | Enhancement |
| Fall Time： | 17.5 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 17.5 ns |
| Factory Pack Quantity： | 3000 |
| Typical Turn-Off Delay Time： | 60 ns |
NTLJS3113PTAG相关文档
- Package Drawing: WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch
- Application Note: WDFN-6 2x2 µCool™ 506AP Single MOSFET Package Board Level Application Notes and Thermal Performance
- Simulation Model: NTLJS3113P Saber Model
- Simulation Model: NTLJS3113P P Spice Model
- Simulation Model: NTLJS3113P Spice 2 Model
- Simulation Model: NTLJS3113P Spice 3 Model
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