Image NVD5890NT4G
型号:

NVD5890NT4G

厂商: ON Semiconductor ON Semiconductor
标准:
分类: 半导体分离式半导体
描述: mosfet 8-64mhz 3.3V GP emi
报错 收藏

NVD5890NT4G的详细信息

Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Yes
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Breakdown Voltage: 20 V
Id - Continuous Drain Current: 123 A
Rds On - Drain-Source Resistance: 2.9 mOhms
Configuration: Single
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Qg - Gate Charge: 74 nC
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 107 W
Mounting Style: SMD/SMT
Package / Case: DPAK-2
Packaging: Reel
Brand: ON Semiconductor
Ciss - Input Capacitance: 4975 pF
Fall Time: 7 ns
Forward Transconductance - Min: 16.8 S
Minimum Operating Temperature: - 55 C
Rise Time: 55 ns
Series: NVD5890N
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 35 ns