Image PBSS4112PANP,115
型号:

PBSS4112PANP,115

厂商: NXP Semiconductors NXP Semiconductors
标准:
分类: 半导体分离式半导体
描述: transistors bipolar - bjt 120v 1A npn/npn lo vcesat transistor
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PBSS4112PANP,115的详细信息

Manufacturer: NXP
Product Category: Transistors Bipolar - BJT
RoHS: Yes
Configuration: Dual
Transistor Polarity: NPN/PNP
Collector- Base Voltage VCBO: 120 V
Collector- Emitter Voltage VCEO Max: 120 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 90 mV, - 150 mV
Maximum DC Collector Current: 1.5 A
Gain Bandwidth Product fT: 120 MHz, 100 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: DFN2020-6
Brand: NXP Semiconductors
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 240, 190
DC Current Gain hFE Max: 305, 375
Maximum Power Dissipation: 1450 mW
Minimum Operating Temperature: - 55 C
Packaging: Reel
Factory Pack Quantity: 3000

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