Image RN2106(T5L,F,T)
型号:

RN2106(T5L,F,T)

厂商: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
标准:
分类: 半导体晶体管(BJT) - 单路﹐预偏压式
描述: tran pnp ssm -50v -100a
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RN2106(T5L,F,T)的详细信息

Datasheets:
RN2101-06:
Product Photos:
SC-75, SOT-416:
Standard Package : 1
Category: Discrete Semiconductor Products
Family: Transistors (BJT) - Single, Pre-Biased
Series: -
Packaging : Cut Tape (CT)
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Dynamic Catalog: PNP Pre-biased Transistors
Other Names: RN2106(T5LFT)CT

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