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S8050LT1的详细信息

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PLASTIC-ENCAPSULATE TRANSISTORS  
S8050LT1  
S8050LT1  
TRANSISTORNPN  
SOT23  
FEATURES  
Power dissipation  
PCM  
Collector current  
ICM  
:
0.3  
0.5  
WTamb=25℃)  
1. BASE  
:
A
V
2. EMITTER  
3. COLLECTOR  
Collector-base voltage  
V(BR)CBO : 40  
ELECTRICAL CHARACTERISTICSTamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic= 100μAIE=0  
Ic= 0.1mAIB=0  
IE=100μAIC=0  
VCB=40 V , IE=0  
VCB=20V , IE=0  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
0.1  
0.1  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
VEB= 5V ,  
IC=0  
0.1  
HFE(1)  
VCE=1V, IC= 50mA  
VCE=1V, IC= 500mA  
IC=500 mA, IB= 50mA  
IC=500 mA, IB= 50mA  
IE= 100mA  
120  
50  
350  
DC current gain(note)  
HFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VCE(sat)  
VBE  
0.6  
V
V
1.2  
1.4  
VCE=6V, IC= 20mA  
f=30MHz  
Transition frequency  
150  
MHz  
fT  
CLASSIFICATION OF HFE(1)  
Rank  
L
H
Range  
100-200  
200-350  
DEVICE MARKING : S8050LT1=J3Y  
Wing Shing Computer Components Co., (H.K.)Ltd.  
Tel:(852)2341 9276 Fax:(852)2797 8153  
E-mail: wsccltd@hkstar.com