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SI1016CX-T1-GE3的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N and P-Channel |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Breakdown Voltage: | 8 V |
Id - Continuous Drain Current: | 600 mA |
Rds On - Drain-Source Resistance: | 330 mOhms, 630 mOhms |
Configuration: | Complementary |
Vgs th - Gate-Source Threshold Voltage: | 0.4 V to 1 V, - 0.4 V to - 1 V |
Qg - Gate Charge: | 0.75 nC, 1 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 220 mW |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-563-6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 11 ns |
Forward Transconductance - Min: | 2 S, 1 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 16 ns |
Series: | SI1016CX |
Factory Pack Quantity: | 3000 |
Tradename: | TrenchFET |
Typical Turn-Off Delay Time: | 26 ns |
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