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SI3424BDV-T1-GE3的详细信息
Manufacturer: | Vishay |
---|---|
Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Breakdown Voltage: | 20 V |
Id - Continuous Drain Current: | 8 A |
Rds On - Drain-Source Resistance: | 28 mOhms |
Configuration: | Single |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 2.1 W |
Mounting Style: | SMD/SMT |
Package / Case: | TSOP-6 |
Packaging: | Reel |
Channel Mode: | Enhancement |
Fall Time: | 12 ns |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 85 ns |
Factory Pack Quantity: | 3000 |
Typical Turn-Off Delay Time: | 17 ns |
Part # Aliases: | SI3424BDV-GE3 |
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