Image SS8050
型号: SS8050
厂商: Fairchild Semiconductor Fairchild Semiconductor
标准:
分类: 半导体
描述: 2W output amplifier of portable radios in class B push-pull operation.
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SS8050  
2W Output Amplifier of Portable Radios in  
Class B Push-pull Operation.  
Complimentary to SS8550  
Collector Current: I =1.5A  
Collector Power Dissipation: P =2W (T =25°C)  
C
C
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
CBO  
25  
V
CEO  
EBO  
6
1.5  
V
I
A
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
1
W
C
T
T
150  
°C  
°C  
J
-65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
25  
6
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =2mA, I =0  
C B  
I =100µA, I =0  
V
E
C
I
I
V
=35V, I =0  
100  
100  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
V
=6V, I =0  
C
h
h
h
DC Current Gain  
V
V
V
=1V, I =5mA  
45  
85  
40  
135  
160  
110  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
=1V, I =100mA  
300  
C
=1V, I =800mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =800mA, I =80mA  
0.28  
0.98  
0.66  
9.0  
0.5  
1.2  
1
V
V
CE  
BE  
BE  
C
B
I =800mA, I =80mA  
C
B
V
=1V, I =10mA  
V
CE  
C
C
Output Capacitance  
V
=10V, I =0  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
V
=10V, I =50mA  
100  
190  
MHz  
T
CE  
C
h
Classification  
FE  
Classification  
B
C
D
h
85 ~ 160  
120 ~ 200  
160 ~ 300  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, November 2002  

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