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SUP60N10-18P-E3的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Id - Continuous Drain Current: | 60 A |
Rds On - Drain-Source Resistance: | 18.3 mOhms |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
Qg - Gate Charge: | 48 nC |
Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 150 W |
Mounting Style: | Through Hole |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Fall Time: | 8 ns |
Forward Transconductance - Min: | 33 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 10 ns |
Factory Pack Quantity: | 50 |
Typical Turn-Off Delay Time: | 18 ns |
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