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SiHG17N60D-GE3的详细信息
Manufacturer: | Vishay |
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Product Category: | MOSFET |
RoHS: | Yes |
Brand: | Vishay / Siliconix |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Breakdown Voltage: | 30 V |
Id - Continuous Drain Current: | 17 A |
Rds On - Drain-Source Resistance: | 340 mOhms |
Configuration: | Single |
Qg - Gate Charge: | 45 nC |
Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 277.8 W |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Bulk |
Fall Time: | 30 ns |
Forward Transconductance - Min: | 6.2 S |
Minimum Operating Temperature: | - 55 C |
Rise Time: | 56 ns |
Series: | SIHxxxN60x |
Part # Aliases: | SIHG17N60D-E3 |
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