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TK46E08N1,S1X的详细信息
| Manufacturer： | Toshiba |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 80 V |
| Vgs - Gate-Source Breakdown Voltage： | 10 V |
| Id - Continuous Drain Current： | 80 A |
| Rds On - Drain-Source Resistance： | 8.4 mOhms |
| Qg - Gate Charge： | 37 nC |
| Pd - Power Dissipation： | 103 W |
| Mounting Style： | Through Hole |
| Package / Case： | TO-220-3 |
| Brand： | Toshiba |
| Factory Pack Quantity： | 50 |
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