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TPH4R606NH,L1Q的详细信息
| Manufacturer： | Toshiba |
|---|---|
| Product Category： | MOSFET |
| RoHS： | Yes |
| Transistor Polarity： | N-Channel |
| Vds - Drain-Source Breakdown Voltage： | 60 V |
| Vgs - Gate-Source Breakdown Voltage： | 20 V |
| Id - Continuous Drain Current： | 85 A |
| Rds On - Drain-Source Resistance： | 3.8 mOhms |
| Configuration： | Single |
| Vgs th - Gate-Source Threshold Voltage： | 2 V to 4 V |
| Qg - Gate Charge： | 49 nC |
| Maximum Operating Temperature： | + 150 C |
| Pd - Power Dissipation： | 63 W |
| Mounting Style： | SMD/SMT |
| Package / Case： | SOP-8 |
| Packaging： | Reel |
| Brand： | Toshiba |
| Channel Mode： | Enhancement |
| Ciss - Input Capacitance： | 3050 pF |
| Fall Time： | 14 ns |
| Minimum Operating Temperature： | - 55 C |
| Rise Time： | 10 ns |
| Factory Pack Quantity： | 5000 |
| Typical Turn-Off Delay Time： | 37 ns |
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