首页 > 关键词 > NE651R479A-EVPW19
| 图片 | 型号 | 厂商 | 标准 | 分类 | 描述 |
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为您共找出"13"个相关器件
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NE651R479A-EVPW19 | CEL | 无源元器件 RF 评估和开发套件，板 | eval board ne651r479a 1.9ghz | |
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NE663M04-EVPW19 | CEL | 嵌入式解决方案 工程工具 | RF development tools for ne663m04-A power at 1.9 ghz | |
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NE6510179A-EVPW19 | CEL | 无源元器件 RF 评估和开发套件，板 | eval board ne6510179a 1.9ghz | |
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NE651R479A-EVPW24 | CEL | 无源元器件 RF 评估和开发套件，板 | eval board ne651r479a 2.4ghz | |
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NE651R479A-EVPW35 | CEL | 无源元器件 RF 评估和开发套件，板 | eval board ne651r479a 3.5ghz | |
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NE651R479A-EVPW26 | CEL | 半导体 分离式半导体 | RF gaas for ne651r479a-A power at 2.6 ghz | |
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NE651R479A-A | CEL |   |
半导体 RF FET | HJ-fet gaas 1.9ghz 1W 79a |
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NE651R479A-T1-A | CEL | |
半导体 RF FET | HJ-fet gaas 1.9ghz 1W 79a |
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NE651R479A-T1 | NEC | 0.4 W L-band power gaas HJ-fet | ||
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NE651R479A | California Eastern Labs | medium power gaas HJ-fet | ||
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NE651R479A-A | California Eastern Labs | medium power gaas HJ-fet | ||
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NE651R479A | NEC | 0.4 W L-band power gaas HJ-fet | ||
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NE651R479A-T1-A | California Eastern Labs | medium power gaas HJ-fet |
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