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图片 型号 厂商 标准 分类 描述
Image: EYG-T3535A30A EYG-T3535A30A Panasonic Electronic Components 热量管理 热 - 垫，片 ● high thermal conductivity : 13 W/m ∙ K ● excellent compressibility : 50 % (t=2 mm, pressure 300 kpa) ● thermal resistance: fi t into uneven parts and provide excellent thermal resistance with a low load
Image: EYG-T7070A05A EYG-T7070A05A Panasonic Electronic Components 热量管理 热 - 垫，片 ● high thermal conductivity : 13 W/m ∙ K ● excellent compressibility : 50 % (t=2 mm, pressure 300 kpa) ● thermal resistance: fi t into uneven parts and provide excellent thermal resistance with a low load
Image: OS8740230W OS8740230W PREMIER DEVICES, INC. excellent linearity
Image: A1088-A A1088-A Vincotech designed for reliability at excellent gps performance
Image: IPP023NE7N3G IPP023NE7N3G Infineon Technologies optimostm3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPD040N03LG IPD040N03LG Infineon Technologies 半导体 optimos?3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPD082N10N3G IPD082N10N3G Infineon Technologies optimos?3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPI110N20N3G IPI110N20N3G Infineon Technologies optimostm3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: RDS070N03 RDS070N03 ROHM Semiconductor excellent resistance to damage from static electricity
Image: BBY57-02W BBY57-02W Siemens Semiconductor Group silicon tuning diode (excellent linearity high Q hyperabrupt tuning diode low series inductance high capacitance ratio)
Image: BBY57-03W BBY57-03W Siemens Semiconductor Group silicon tuning diode (excellent linearity high Q hyperabrupt tuning diode low series inductance)
Image: IPS040N03LG IPS040N03LG Infineon Technologies optimos?3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPP075N15N3G IPP075N15N3G Infineon Technologies 半导体 optimos?3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPP086N10N3G IPP086N10N3G Infineon Technologies 半导体 optimos?3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPP028N08N3G IPP028N08N3G Infineon Technologies 半导体 optimos?3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPP041N12N3G IPP041N12N3G Infineon Technologies optimostm3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPI111N15N3G IPI111N15N3G Infineon Technologies 半导体 optimostm3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPP110N20N3G IPP110N20N3G Infineon Technologies optimostm3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: IPP111N15N3G IPP111N15N3G Infineon Technologies optimostm3 power-transistor features excellent gate charge x R DS(on) product (fom)
Image: CIL31YR10MNE CIL31YR10MNE ETC It has ferrite and 100% Ag as internal conductors, the cil series has excellent Q characteristics and eliminate crosstalk.

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