|
D170S25C |
Infineon Technologies |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching 2.5kv 255a |
|
BAS321,135 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode ult fast recov rectifier 250v 0.25a |
|
BAW62,133 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode switching 75v 0.25a 2-pin |
|
|
BAW62,143 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode switching 75v 0.25a 2-pin |
|
BAS16VY,125 |
NXP Semiconductors |
 |
半导体
分离式半导体
|
diodes - general purpose, power, switching diode switching 85v 0.2A 6-pin |
|
|
BAV21,143 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode switching 250v 0.25a 2-pin |
|
|
D650S12T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 1200v 620a |
|
|
1N4448,143 |
NXP Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching diode switching 100v 0.2A 2-pin alf |
|
|
D650S14T |
Infineon Technologies |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching fast diode 1400v 620a |
|
1N4148WT-7 |
Diodes Incorporated |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100v Io/150ma T/R |
|
|
1SS400GT2R |
Rohm Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch 100ma 90v |
|
|
DA221TL |
Rohm Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching switch 20v 100ma |
|
|
CLL914 TR |
Central Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100v 1A |
|
CDSQR4148 |
Comchip Technology |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching dfn 150ma 75v Sm sgnl switching |
|
CMPD6001S TR |
Central Semiconductor |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching dual In series low leakage |
|
DP0150ALP4-7B |
Diodes Incorporated |
|
半导体
分离式半导体
|
transistors bipolar - bjt general purpose tran X1-dfn1006-3,10k |
|
|
NSB8DT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 200 volt 8.0 amp 125 amp ifsm |
|
|
NSB8BT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 100 volt 8.0 amp 125 amp ifsm |
|
|
NSB8GT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 400 volt 8.0 amp 125 amp ifsm |
|
|
NSB8JT/81 |
Vishay Semiconductors |
|
半导体
分离式半导体
|
diodes - general purpose, power, switching 600 volt 8.0 amp 125 amp ifsm |
